DC COMPONENTS CO., LTD.
R
2SB772
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in output stage of 1W audio amplifier,
voltage regulator, DC-DC converter and relay driver.
Pinning
1 = Emitter
2 = Collector
3 = Base
.304(7.72)
.285(7.52)
.105(2.66)
.095(2.41)
TO-126
.041(1.05)
.037(0.95)
.154(3.91)
.150(3.81)
.055(1.39)
.045(1.14)
.152(3.86)
.138(3.50)
Absolute Maximum Ratings
(T
A
=25
o
C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current(DC)
Total Power Dissipation(T
C
=25 C)
Total Power Dissipation(T
A
=25 C)
Junction Temperature
Storage Temperature
o
o
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C
I
B
P
D
P
D
T
J
T
STG
Rating
-40
-30
-5
-3
-7
-0.6
10
1
+150
-55 to +150
Unit
V
V
V
A
A
A
W
W
o
o
.279(7.09)
.275(6.99)
1
2 3
3 Typ
.052(1.32)
.048(1.22)
3 Typ
o
o
.620(15.75)
.600(15.25)
.032(0.81)
.028(0.71)
.189(4.80)
.171(4.34)
.022
(0.55)
Typ
3 Typ
o
C
Dimensions in inches and (millimeters)
3 Typ
o
C
Electrical Characteristics
o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
(1)
Min
-40
-30
-5
-
-
-
-
30
100
-
-
Typ
-
-
-
-
-
-0.3
-1
-
200
80
55
Max
-
-
-
-1
-1
-0.5
-2
-
400
-
-
Unit
V
V
V
µA
µA
V
V
-
-
MHz
pF
Test Conditions
I
C
=-100µA
I
C
=-1mA
I
E
=-10µA
V
CB
=-30V
V
EB
=-3V
I
C
=-2A, I
B
=-0.2A
I
C
=-2A, I
B
=-0.2A
I
C
=-20mA, V
CE
=-2V
I
C
=-1A, V
CE
=-2V
I
C
=-0.1A, V
CE
=-5V
I
E
=0, V
CB
=-10V, f=1MHz
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
(1)
(1)
V
CE(sat)
V
BE(sat)
h
FE1
h
FE2
f
T
C
ob
Transition Frequency
Output Capacitance
(1)Pulse Test: Pulse Width
380µs, Duty Cycle
2%
Classification of h
FE2
Rank
Range
Q
100~200
P
160~320
E
200~400
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