DC COMPONENTS CO., LTD.
R
2SB857
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for low frequency power amplifier.
TO-220AB
Pinning
1 = Base
2 = Collector
3 = Emitter
.405(10.28)
.380(9.66)
.185(4.70)
.173(4.40)
Φ.151
Typ
.055(1.39)
Φ(3.83)
.045(1.15)
.295(7.49)
.220(5.58)
Absolute Maximum Ratings
(T
A
=25
o
C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (continuous)
Collector Current (peak)
Total Power Dissipation(T
C
=25 C)
Junction Temperature
Storage Temperature
o
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C
P
D
T
J
T
STG
Rating
-70
-50
-5
-4
-8
40
+150
-55 to +150
Unit
V
V
V
A
A
W
o
o
.625(15.87)
.570(14.48)
1 2 3
.350(8.90)
.330(8.38)
.640
Typ
(16.25)
.055(1.40)
.045(1.14)
.037(0.95)
.030(0.75)
.562(14.27)
.500(12.70)
.100
Typ
(2.54)
.024(0.60)
.014(0.35)
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics
o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
(1)
Min
-70
-50
-5
-
-
-
35
60
-
Typ
-
-
-
-
-
-
-
-
15
Max
-
-
-
-1
-1
-1
-
320
-
Unit
V
V
V
µA
V
V
-
-
MHz
Test Conditions
I
C
=-10µA, I
E
=0
I
C
=-50mA, I
B
=0
I
E
=-10µA, I
C
=0
V
CB
=-50V, I
E
=0
I
C
=-2A, I
B
=-0.2A
I
C
=-1A, V
CE
=-4V
I
C
=-0.1A, V
CE
=-4V
I
C
=-1A, V
CE
=-4V
I
C
=-500mA, V
CE
=-4V, f=100MHz
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
DC Current Gain
(1)
Transition Frequency
(1)Pulse Test: Pulse Width
(1)
V
CE(sat)
V
BE(on)
h
FE1
h
FE2
f
T
380µs, Duty Cycle
2%
Classification of h
FE2
Rank
Range
B
60~120
C
100~200
D
160~320
DCCOM [ DC COMPONENTS ]
