DC COMPONENTS CO., LTD.
R
2SC1213
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for low frequency amplifier applications.
TO-92
Pinning
1 = Emitter
2 = Collector
3 = Base
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
2 Typ
2 Typ
o
o
Absolute Maximum Ratings
(T
A
=25
o
C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
Rating
50
50
4
500
400
+150
-55 to +150
Unit
V
V
V
mA
mW
o
o
.500
Min
(12.70)
.022(0.56)
.014(0.36)
.100
Typ
(2.54)
.148(3.76)
.132(3.36)
.022(0.56)
.014(0.36)
.050
Typ
(1.27)
3 2 1
C
.050
o
o
5
Typ.
5
Typ.
(1.27) Typ
Dimensions in inches and (millimeters)
C
Electrical Characteristics
o
Characteristic
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
(1)
Transition Frequency
(1)Pulse Test: Pulse Width
(1)
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
(1)
Min
50
50
4
-
-
-
-
60
35
100
2%
Typ
-
-
-
-
-
-
-
-
-
160
Max
-
-
-
0.5
0.5
0.6
1.2
320
-
-
Unit
V
V
V
µA
µA
V
V
-
-
MHz
Test Conditions
I
C
=100µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=20V, I
E
=0
V
EB
=5V, I
C
=0
I
C
=150mA, I
B
=15mA
I
C
=150mA, I
B
=15mA
I
C
=10mA, V
CE
=3V
I
C
=500mA, V
CE
=3V
I
C
=20mA, V
CE
=6V
V
CE(sat)
V
BE(sat)
h
FE1
h
FE2
f
T
380µs, Duty Cycle
Classification of h
FE1
Rank
Range
B
60~120
C
100~200
D
160~320
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