DC COMPONENTS CO., LTD.
R
2SD1616A
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for audio frequency power amplifier and
medium-speed switching applications.
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
2 Typ
2 Typ
o
o
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings
(T
A
=25
o
C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (pulse)
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C
P
D
T
J
T
STG
Rating
120
60
6
1
2
750
+150
-55 to +150
Unit
V
V
V
A
A
mW
o
C
o
.500
Min
(12.70)
.022(0.56)
.014(0.36)
.100
Typ
(2.54)
.148(3.76)
.132(3.36)
.022(0.56)
.014(0.36)
.050
Typ
(1.27)
3 2 1
.050
o
o
5
Typ.
5
Typ.
(1.27) Typ
Dimensions in inches and (millimeters)
C
Electrical Characteristics
o
Characteristic
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
DC Current Gain
(1)
Transition Frequency
Output Capacitance
Turn-On Time
Storage Time
Fall Time
(1)Pulse Test: Pulse Width
(1)
(1)
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
(1)
Min
120
60
6
-
-
-
-
0.6
135
81
100
-
-
-
-
2%
Typ
-
-
-
-
-
0.15
0.9
-
-
-
160
-
0.07
0.95
0.07
Max
-
-
-
0.1
0.1
0.3
1.2
0.7
600
-
-
19
-
-
-
Unit
V
V
V
µA
µA
V
V
V
-
-
MHz
pF
µS
µS
µS
Test Conditions
I
C
=100µA
I
C
=1mA
I
E
=10µA
V
CB
=60V
V
EB
=6V
I
C
=1A, I
B
=50mA
I
C
=1A, I
B
=50mA
I
C
=50mA, V
CE
=2V
I
C
=100mA, V
CE
=2V
I
C
=1A, V
CE
=2V
I
C
=100mA, V
CE
=2V
V
CB
=10V, f=1MHz, I
E
=0
I
C
=100mA, V
CE
=10V
I
B1
=I
B2
=10mA
V
BE(off)
=-2 ~ -3V
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE1
h
FE2
f
T
C
ob
t
on
t
s
t
f
380µs, Duty Cycle
Classification of h
FE1
Rank
Range
Y
135~270
G
200~400
L
300~600
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