DC COMPONENTS CO., LTD.
R
BU407
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in TV horizontal output and
switching applications.
TO-220AB
Pinning
1 = Base
2 = Collector
3 = Emitter
.625(15.87)
.570(14.48)
.405(10.28)
.380(9.66)
.185(4.70)
.173(4.40)
Φ.151
Typ
.055(1.39)
Φ(3.83)
.045(1.15)
.295(7.49)
.220(5.58)
Absolute Maximum Ratings
(T
A
=25
Characteristic
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation(T
C
=25 C)
Junction Temperature
Storage Temperature
o
o
C)
Rating
150
6
7
4
60
+150
-55 to +150
Unit
V
V
A
A
W
o
o
.350(8.90)
.330(8.38)
1 2 3
.640
Typ
(16.25)
Symbol
V
CEO
V
EBO
I
C
I
B
P
D
T
J
T
STG
.055(1.40)
.045(1.14)
.037(0.95)
.030(0.75)
.562(14.27)
.500(12.70)
.100
Typ
(2.54)
.024(0.60)
.014(0.35)
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics
o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
BV
CEO
I
CES
I
EBO
(1)
Min
150
-
-
-
-
25
35
10
10
Typ
-
-
-
-
-
-
-
-
-
Max
-
5
1
1
1.2
-
200
-
-
Unit
V
mA
mA
V
V
-
-
-
MHz
Test Conditions
I
C
=100mA, I
B
=0
V
CE
=400V
V
EB
=6V, I
C
=0
I
C
=5A, I
B
=0.5A
I
C
=5A, I
B
=0.5A
I
C
=0.5A, V
CE
=5V
I
C
=2A, V
CE
=5V
I
C
=2A, V
CE
=5V
I
C
=0.5A, V
CE
=10V, f=1MHz
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
(1)
(1)
V
CE(sat)
V
BE(sat)
h
FE1
h
FE2
h
FE3
Transition Frequency
(1)Pulse Test: Pulse Width
f
T
380µs, Duty Cycle 2%
Classification of h
FE2
Rank
Range
B
35~85
C
75~125
D
115~200
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