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GP102 参数 Datasheet PDF下载

GP102图片预览
型号: GP102
PDF下载: 下载PDF文件 查看货源
内容描述: 1 AMP高可靠性硅二极管 [1 AMP HIGH RELIABILITY SILICON DIODES]
分类和应用: 二极管IOT
文件页数/大小: 2 页 / 331 K
品牌: DEC [ DIOTEC ELECTRONICS CORPORATION ]
 浏览型号GP102的Datasheet PDF文件第1页  
DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
Data Sheet No. GPDG-101-2B
1 AMP HIGH RELIABILITY SILICON DIODES
RATING & CHARACTERISTIC CURVES FOR SERIES GP100 - GP110

1.2
Average Forward Current, Io
(Amperes)
Peak Forward Surge Current
(Amperes)
1.0
0.8
0.6
0.2
0
0
50
100
150
180
FIGURE 1. FORWARD CURRENT DERATING CURVE
Number of Cycles at 60 Hz
FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT
10
Instantaneous Reverse Current, I
(Microamperes)
Instantaneous Forward Current
(Amperes)
1.0
1.0
.1
0.1
0.01
0.6
0.7
08
0.9
1.0
1.1
1.2
1.3
Percent of Rated Peak Reverse Voltage
FIGURE 4. TYPICAL REVERSE CHARACTERISTICS
Instantaneous Forward Voltage (Volts)
FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE
T
J
= 25
o
C
Peak Forward Surge Current
(Amperes)
Capacitance, pF
Reverse Voltage, (Volts)
FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE
Pulse Duration (Milliseconds)
FIGURE 6. PEAK FORWARD SURGE CURRENT
3 4 3 0 2 1 0 ) ( &' %
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