}¥|
{
n x w u
¥z yj ©v¢@tUs r
k q p o k l l k
¥R¥n m "Rdj
a e
pRd@gdb ppxe fb ¢Rpa u ¢s f&pp ffe ` cdb a "¢p V
i r y b v ` w
t r e q i W g b
` Y X
v u
W g i r b v ` w v t r q i h g b
¢@p epR¢pb @db yppxe Rc ¢¢i ` u ¢s fe&ppfffe ` cdb a "¢X W V
` Y
T S Q I
U¢RP ¥H
p
d &
e fe
i g
h
f~
ü
ÿ ¥�½
þ
¦ ¥£
¤
$ ¥¥@BA ¥@9¢6
! C A 0 8 7
4 G
53©3©1 ©) (%&¥# "
2 0 '
$ !
E
FD
©
0.1
í
éì
1.0
¨ ¨
©¢§
É È Ç Æ Å Ä Ã Á À ¿ ¾ ¼ » º
ÊV5T» Â9QCUQ�½G9E8¹9¸¶
·
©¢
¢
¥R«ª"£ dU¨ ¥d¦
¬ § ©
¢ ¥ §
U¤"£ d¡ ¥
¥ ¢
U¥ R&Uf U
¢
©
©
¥
©
FIGURE 1. FORWARD CURRENT DERATING CURVE
³µ ©® ° « ® © ¤ © « ¨ ¦ ¤
´²Q`9±&¯ 9E8Q&¬$ª9© G§¥£
0.01
0.4
¡
¢
18020 Hobart Blvd., Unit B
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
DIOTEC ELECTRONICS CORP.
0.6
0.8
RATING & CHARACTERISTIC CURVES FOR SERIES RGP200 - RGP210
2 AMP FAST RECOVERY SILICON DIODES
1.0
1.2
1.4
1.6
1.8
û õ
Qò ö UôGó s9QøQ÷ ö U52Qò 9E&Cî
ú ù ï
õ ô ó ï ñ ï ð ï
æ
QØ Ù ãUGâ 9EÚ Ù 55X`9´à UEÞ$UEE×9Ú GÚ E× Ö
Ü å Û ä ã Ü â áß Ú ß Ü
Ø Ý Ü Û
Ù × Ù Ø
èéç
ë
±ê
H30
FIGURE 3. TYPICAL FORWARD CHARACTERISTIC
FIGURE 5. REVERSE RECOVERY TEST SETUP AND TIME CHARACTERISTIC
W
W
W
Õ Õ Ô Ó Ò ÐÑ Ï Î Í Ì Ë
FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT
FIGURE 4. TYPICAL JUNCTION CAPACITANCE
Data Sheet No. FSPD-200-2B
T
J
= 25
o
C
f = 1 MHz
V
SIG
= 50 mV P-P
DEC [ DIOTEC ELECTRONICS CORPORATION ]
