D
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N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
20
R
DS(on)
(Ω)
0.020 at V
GS
= 4.5 V
0.025 at V
GS
= 2.5 V
I
D
(A)
6
6
10 nC
a
FEATURES
•
Halogen-free
Q
g
(Typ.)
•
TrenchFET
®
Power MOSFET
RoHS
APPLICATIONS
• Load Switches for Portable Devices
COMPLIANT
D
D
G
G
S
D
S
N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 70 °C
Maximum Power Dissipation
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
e, f
Symbol
V
DS
V
GS
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
I
D
I
DM
I
S
Limit
20
± 12
6
a
6
a
6
a, b, c
6
a, b, c
30
5.2
2.1
b, c
6.3
4
2.5
b, c
1.6
b, c
- 55 to 150
260
Unit
V
A
P
D
T
J
, T
stg
W
°C
THERMAL RESISTANCE RATINGS
Parameter
a, c, d
Maximum Junction-to-Ambient
°C/W
15
Maximum Junction-to-Foot (Drain)
Steady State
20
Notes:
a. Package limited, T
C
= 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 95 °C/W.
e. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
f. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
t
≤
5s
Symbol
R
thJA
R
thJF
Typical
40
Maximum
50
Unit
1
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