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DTE2311
P-Channel 20-V (D-S) MOSFET
FEATURES
I
D
(A)
- 4.2
- 3.6
PRODUCT SUMMARY
V
DS
(V)
- 20
R
DS(on)
(Ω)
0.045 at V
GS
= - 4.5 V
0.072 at V
GS
= - 2.5 V
•
Halogen-free
RoHS
COMPLIANT
TO-226AA
(TO-92)
S
G
1
S*
G
2
D
3
Top View
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
- 1.35
1.5
1.0
- 55 to 150
- 4.2
- 3.9
- 20
- 0.95
1.05
0.67
W
°C
10 s
Steady State
- 20
± 12
- 4.0
- 3.2
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t
≤
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
65
100
43
Maximum
83
120
52
°C/W
Unit
1
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