D
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N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
30
R
DS(on)
(Ω)
0.0135 at V
GS
= 10 V
0.0165 at V
GS
= 4.5 V
TO-251
D
FEATURES
I
D
(A)
a, g
16
7.3 nC
16
Q
g
(Typ.)
•
Halogen-free
• TrenchFET
®
Gen III Power MOSFET
• 100 % R
g
Tested
•
100 % UIS Tested
RoHS
COMPLIANT
APPLICATIONS
• DC/DC Conversion
- System Power
G
S
G D S
Top View
N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current
Avalanche Current
Avalanche Energy
Continuous Source-Drain Diode Current
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
L = 0.1 mH
Symbol
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
I
S
Limit
30
± 20
16
16
12
b, c
9.5
b, c
32
15
11.25
16
2.9
b, c
27.7
17.7
3.5
b, c
2.2
b, c
- 55 to 150
260
Unit
V
A
mJ
A
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 70 °C
Maximum Power Dissipation
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
P
D
T
J
, T
stg
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
Notes:
a. Based on T
C
= 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
t
≤
10 s
Steady State
Symbol
R
thJA
R
thJC
Typical
29
3.6
Maximum
36
4.5
Unit
°C/W
1
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