P-Channel 100-V (D-S) MOSFET
FEATURES
I
D
(A)
- 19
- 15.7
Q
g
(Typ.)
16.5 nC
www.din-tek.jp
DTL19P10
PRODUCT SUMMARY
V
DS
(V)
- 100
R
DS(on)
(Ω)
0.120 at V
GS
= - 10 V
0.160 at V
GS
= - 4.5V
•
Halogen-free Option Available
• TrenchFET
®
Power MOSFET
• UIS and R
g
Tested
RoHS
COMPLIANT
APPLICATIONS
• Active Clamp in Intermediate DC/DC Power Supplies
TO-251
S
G
D
G D S
Top View
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
Limit
- 100
± 20
- 19.0
- 12.6
- 15
a, b
- 10
a, b
- 20
- 13.2
- 3.0
a, b
15
11.25
52
33
3.7
a, b
2.4
- 50 to 150
260
Unit
V
Continuous Drain Current (T
J
= 150 °C)
I
D
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
I
DM
I
S
I
AS
E
AS
A
mJ
Maximum Power Dissipation
P
D
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
T
J
, T
stg
°C
1
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