DTL1N60/DTP1N60/DTU1N60
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
14
2.7
8.1
Single
600
7
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FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
TO-220AB
D
DPAK
(TO-252)
D
D
IPAK
(TO-251)
G
G
S
G
D S
G D S
Top View
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Current
a
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
LIMIT
600
± 20
1.4
0.89
0.28
0.020
93
1.4
3.6
36
2.5
3.8
- 55 to + 150
260
d
UNIT
V
A
Pulsed Drain
I
DM
5.6
Linear Derating Factor
Linear Derating Factor (PCB Mount)
e
Single Pulse Avalanche Energy
b
E
AS
Repetitive Avalanche Current
a
I
AR
a
Repetitive Avalanche Energy
E
AR
Maximum Power Dissipation
T
C
= 25 °C
P
D
e
Maximum Power Dissipation (PCB Mount)
T
A
= 25 °C
Peak Diode Recovery dV/dt
c
dV/dt
Operating Junction and Storage Temperature Range
T
J
, T
stg
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 37 mH, R
g
= 25
Ω,
I
AS
= 1.4 A (see fig. 12).
c. I
SD
≤1.4
A, dI/dt
≤
40 A/μs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
W/°C
mJ
A
mJ
W
V/ns
°C
1
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