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DTL2N60_13 参数 Datasheet PDF下载

DTL2N60_13图片预览
型号: DTL2N60_13
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOSFET可在磁带和卷轴 [Power MOSFET Available in Tape and Reel]
分类和应用:
文件页数/大小: 11 页 / 3668 K
品牌: DINTEK [ DinTek Semiconductor Co,.Ltd ]
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DTL2N60/DTP2N60/DTU2N60
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
18
3.0
8.9
Single
600
3.9
www.din-tek.jp
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
D
DPAK
(TO-252)
D
D
IPAK
(TO-251)
G
G
S
G
D S
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Current
a
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
LIMIT
600
± 20
2.0
1.3
8.0
0.33
0.020
74
2.0
4.2
42
2.5
3.0
- 55 to + 150
260
d
UNIT
V
A
Pulsed Drain
I
DM
Linear Derating Factor
Linear Derating Factor (PCB Mount)
e
Single Pulse Avalanche Energy
b
E
AS
Repetitive Avalanche Current
a
I
AR
a
Repetitive Avalanche Energy
E
AR
T
C
= 25 °C
Maximum Power Dissipation
P
D
e
Maximum Power Dissipation (PCB Mount)
T
A
= 25 °C
Peak Diode Recovery dV/dt
c
dV/dt
Operating Junction and Storage Temperature Range
T
J
, T
stg
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 37 mH, R
g
= 25
Ω,
I
AS
= 2.0 A (see fig. 12).
c. I
SD
2.0 A, dI/dt
40 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
W/°C
mJ
A
mJ
W
V/ns
°C
1