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P-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
- 30
R
DS(on)
()
0.007 at V
GS
= - 10 V
0.010 at V
GS
= - 4.5 V
I
D
(A)
a
± 75
± 75
FEATURES
• Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
TO-220AB
S
TO-263
G
G
G D S
Top View
D S
Top View
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
Parameter
Gate-Source Voltage
Continuous Drain Current (T
J
= 175 °C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
b
Power Dissipation
L = 0.1 mH
T
C
= 25 °C (TO-220AB and TO-263)
T
A
= 25 °C (TO-263)
c
T
C
= 25 °C
T
C
= 125 °C
Symbol
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
± 20
- 75
a
- 65
- 240
- 60
180
187
d
3.75
- 55 to 175
mJ
W
°C
A
Unit
V
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
Notes:
a. Package limited.
b. Duty cycle
1 %.
c. When mounted on 1" square PCB (FR-4 material).
d. See SOA curve for voltage derating.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
PCB Mount (TO-263)
c
Symbol
Free Air (TO-220AB)
R
thJA
R
thJC
Limit
40
62.5
0.8
Unit
°C/W
1
DINTEK [ DinTek Semiconductor Co,.Ltd ]
