DT
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N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
200
r
DS(on)
(Ω)
0.030 at V
GS
= 10 V
I
D
(A)
65
a
FEATURES
•
•
•
•
TrenchFET
®
Power MOSFET
175 °C Junction Temperature
Low Thermal Resistance Package
100 % R
g
Tested
RoHS
COMPLIANT
APPLICATIONS
• Isolated DC/DC Converters
TO-220AB
D
G
S
G D S
Top View
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175 °C)
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy
b
Maximum Power Dissipation
b
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25 °C
T
A
= 25 °C
d
T
C
= 25 °C
T
C
= 125 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
Limit
100
± 20
65
a
37
a
140
35
61
375
c
3.75
- 55 to 175
mJ
W
°C
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case (Drain)
Notes:
a. Package limited.
b. Duty cycle
≤
1 %.
c. See SOA curve for voltage derating.
d. When Mounted on 1" square PCB (FR-4 material).
PCB Mount (TO-263)
d
Symbol
R
thJA
R
thJC
Limit
40
0.4
Unit
°C/W
1
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