P-Channel 30-V (D-S) MOSFET
FEATURES
I
D
(A)
d
- 11.6
- 10
Q
g
(Typ.)
22 nC
www.din-tek.jp
DTM4407
PRODUCT SUMMARY
V
DS
(V)
- 30
R
DS(on)
(Ω)
0.0125 at V
GS
= - 10 V
0.018 at V
GS
= - 4.5 V
•
Halogen-free According to IEC 61249-2-21
Available
• TrenchFET
®
Power MOSFET
• 100 % R
g
Tested
• 100 % UIS Tested
APPLICATIONS
S
SO-8
S
S
S
G
• Load Switches
- Notebook PCs
- Desktop PCs
1
2
3
4
Top View
8
7
6
5
D
D
D
D
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
Limit
- 30
± 25
- 11.6
- 10.5
- 8.7
a, b
- 7.7
a, b
- 50
- 4.6
2.0
a, b
- 20
20
5.6
3.6
2.5
a, b
1.6
a, b
- 55 to 150
Unit
V
Continuous Drain Current (T
J
= 150 °C)
I
D
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
I
DM
I
S
I
AS
E
AS
A
mJ
Maximum Power Dissipation
P
D
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a, c
Maximum Junction-to-Foot
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 85 °C/W.
d. Based on T
C
= 25 °C.
t
≤
10 s
Steady State
Symbol
R
thJA
R
thJF
Typical
39
18
Maximum
50
22
Unit
°C/W
1
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