DT
www.daysemi.jp
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
30
R
DS(on)
(Ω)
0.0095 at V
GS
= 10 V
0.013 at V
GS
= 4.5 V
I
D
(A)
a
17
8 nC
14.5
Q
g
(Typ.)
FEATURES
•
Halogen-free According to IEC 61249-2-21
• TrenchFET
®
Power MOSFET
• 100 % R
g
and UIS Tested
APPLICATIONS
• Notebook CPU Core
- High-Side Switch
D
SO-8
S
S
S
G
1
2
3
4
Top
View
8
7
6
5
D
D
D
D
S
N-Channel
MOSFET
G
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
Limit
30
± 20
17
13.5
12
b, c
9.6
b, c
50
4.5
2.2
b, c
20
20
5
3.2
2.5
b, c
1.6
b, c
- 55 to 150
mJ
Unit
V
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
A
T
C
= 25 °C
T
C
= 70 °C
Maximum Power Dissipation
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Foot (Drain)
t
≤
10 s
Steady State
Symbol
R
thJA
R
thJF
Typical
38
20
Maximum
50
25
Unit
°C/W
Notes:
a. Based on T
C
= 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
1
DINTEK [ DinTek Semiconductor Co,.Ltd ]
