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TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
- 30
I
D
= 1 mA
V
DS
- Drain-to-Source Voltage (V)
- 32
R
DS(on)
- On-Resistance
1.5
1.8
I
D
= 7 A
DTM4431
V
GS
= 10 V
- 34
(Normalized)
1.2
V
GS
= 4.5 V
- 36
0.9
- 38
- 40
- 50
- 25
0
25
50
75
100
125
150
175
0.6
- 50
- 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
T
J
- Junction Temperature (°C)
On-Resistance vs. Junction Temperature
100
0.25
On-Resistance vs. Junction Temperature
1
T
J
= 150 °C
R
DS(on)
- On-Resistance (Ω)
10
I
S
-
Source
Current (A)
0.20
0.15
T
J
= 25 °C
0.1
0.10
0.01
0.05
T
J
= 150 °C
T
J
= 25 °C
0
2
4
6
8
10
0.001
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
-
Source-to-Drain
Voltage (V)
V
GS
-
Gate-to-Source
Voltage (V)
Source Drain Diode Forward Voltage
1.1
On-Resistance vs. Gate-to-Source Voltage
0.8
V
GS(th)
Variance (V)
I
D
= 250 μA
0.5
I
D
= 1 mA
0.2
- 0.1
- 0.4
- 50
- 25
0
25
50
75
100
125
150
175
T
J
- Temperature (°C)
Threshold Voltage
4
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