P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
- 30
R
DS(on)
()
0.005 at V
GS
= - 10 V
0.00775 at V
GS
= - 4.5 V
I
D
(A)
d
- 29
- 23
Q
g
(Typ.)
61 nC
www.din-tek.jp
DTM4459
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• 100 % R
g
and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Adaptor Switch
• Notebook
SO-8
S
S
S
G
1
2
3
4
Top View
8
7
6
5
D
D
D
D
G
S
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
Limit
- 30
± 20
- 29
- 23.5
- 19.7
a, b
- 15.6
a, b
- 70
- 6.5
- 2.9
a, b
- 30
45
7.8
5
3.5
a, b
2.2
a, b
- 55 to 150
Unit
V
Continuous Drain Current (T
J
= 150 °C)
I
D
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
I
DM
I
S
I
AS
E
AS
A
mJ
Maximum Power Dissipation
P
D
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a, c
Maximum Junction-to-Foot
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under steady state conditions is 80 °C/W.
d. Based on T
C
= 25 °C.
t
10
s
Steady State
Symbol
R
thJA
R
thJF
Typical
29
13
Maximum
35
16
Unit
°C/W
1
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