P-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
() at V
GS
= - 10 V
R
DS(on)
() at V
GS
= - 4.5 V
I
D
(A)
Configuration
SO-8
S
S
S
G
1
2
3
4
Top View
8
7
6
5
D
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DTM4483
FEATURES
- 30
0.0085
0.0200
- 22
Single
S
• TrenchFET
®
Power MOSFET
• ESD Protection: 3000 V
• 100 % R
g
and UIS Tested
• AEC-Q101 Qualified
c
G
D
D
D
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
SO-8
DTM4483
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain
Current
a
L = 0.1 mH
T
C
= 25 °C
T
C
= 125 °C
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
C
= 25 °C
T
C
= 125 °C
SYMBOL
V
DS
V
GS
I
D
I
S
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
LIMIT
- 30
± 20
- 22
- 13
-6
- 84
- 50
125
7
2
- 55 to + 175
mJ
W
°C
A
UNIT
V
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
PCB Mount
b
SYMBOL
R
thJA
R
thJF
LIMIT
85
21
UNIT
°C/W
1
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