N- and P-Channel
30
V (D-S) MOSFET
www.din-tek.jp
DTM4616
PRODUCT SUMMARY
V
DS
(V)
N-Channel
P-Channel
30
- 30
R
DS(on)
(Ω)
0.024 at V
0.036 at V
GS
= 10 V
GS
= 4.5 V
FEATURES
I
D
(A)
a
Q
g
(Typ.)
6.7
6.2
- 7.0
- 6.2
5.3
11.8
•
•
•
•
Halogen-free
TrenchFET
®
Power MOSFET
100 % R
g
Tested
100 % UIS Tested
RoHS
COMPLIANT
0.024 at V
GS
= - 10 V
0.036 at V
GS
= - 4.5 V
APPLICATIONS
• Backlight Inverter for LCD Display
• Full Bridge Converter
D
1
S
2
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
8
7
6
5
D
1
D
1
D
2
D
2
S
1
D
2
P-Channel MOSFET
G
1
G
2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current
Source-Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0 1 mH
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
T
J
, T
stg
P
D
T
C
= 25 °C
T
A
= 25 °C
I
DM
I
S
I
SM
I
AS
E
AS
I
D
Symbol
V
DS
V
GS
6.7
5.4
5.6
b, c
4.4
b, c
20
2.5
1.6
b, c
20
7
2.45
3.0
1.9
2.0
b, c
1.25
b, c
- 55 to 150
N-Channel
30
± 20
- 7.0
- 5.7
- 5.7
b, c
- 4.7
b, c
- 20
- 2.5
- 1.6
b, c
- 20
- 10
5
3.1
2
2.0
b, c
1.25
b, c
°C
W
mJ
A
P-Channel
- 30
Unit
V
THERMAL RESISTANCE RATINGS
N-Channel
Parameter
Maximum
Junction-to-Ambient
b, d
t
≤
10 s
Steady State
Maximum Junction-to-Foot (Drain)
Notes:
a. Based on T
C
= 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 120 °C/W.
Symbol
R
thJA
R
thJF
Typ.
54
33
Max.
64
42
P-Channel
Typ.
49
30
Max.
62.5
40
Unit
°C/W
1