DT
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N-Channel 80 V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
80
R
DS(on)
()
0.075 at V
GS
= 10 V
I
D
(A)
a
3.5
Q
g
(Typ.)
7.3 nC
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• 100 % R
g
and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Conversion
- Notebook System Power
SO-8
S1
1
G1
2
S2
G2
3
4
Top
View
8
7
6
5
D1
D1
D1
D2
D2
G1
S1
G2
D2
S2
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Symbol
Parameter
V
DS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
C
Avalanche Current
C
C
Maximum
80
±30
3.5
2.9
18
16
12.8
2
1.3
-55 to 150
Units
V
V
A
V
GS
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
STG
A
mJ
W
°
C
Repetitive avalanche energy L=0.1mH
T
A
=25°
C
Power Dissipation
B
T
A
=70°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
AD
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
48
74
32
Max
62.5
90
40
Units
°
C/W
°
C/W
°
C/W
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