DTM4830_13 参数 Datasheet PDF下载

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Electrical Characteristics (T

J

=25° unless otherwise noted)

C

Parameter

Symbol

STATIC PARAMETERS

BV

DSS

Drain-Source Breakdown Voltage

I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

I

SM

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

Pulsed Body-diode Current

C

DTM4830

Conditions

I

D

=250µA, V

GS

=0V

V

DS

=80V, V

GS

=0V

T

J

=55°

C

V

DS

=0V, V

GS

= ±30V

V

DS

=V

GS

I

D

=250µA

V

GS

=10V, V

DS

=5V

V

GS

=10V, I

D

=3.5A

T

J

=125°

C

V

DS

=5V, I

D

=3.5A

I

S

=1A,V

GS

=0V

Min

80

Typ

Max

Units

V

1

5

100

3.5

18

62

113.0

15

0.77

1

2.5

18

510

640

40

20

1.8

11

5.5

5

1.2

7.2

2.2

17

2

14

35

20

50

26

65

770

52

30

2.7

13

7

6

1.7

75

135

4.2

5

µA

nA

V

A

mΩ

S

V

A

A

pF

pF

pF

Ω

nC

nC

nC

ns

ns

ns

ns

ns

nC

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

C

iss

Input Capacitance

C

oss

C

rss

R

g

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

V

GS

=0V, V

DS

=0V, f=1MHz

V

GS

=0V, V

DS

=40V, f=1MHz

28

12

0.9

8

SWITCHING PARAMETERS

Q

g

(10V) Total Gate Charge

Q

g

(4.5V) Total Gate Charge

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

I

F

=3.5A, dI/dt=300A/µs

2

V

GS

=10V, V

DS

=40V, I

D

=3.5A

4

4

0.7

V

GS

=10V, V

DS

=40V, R

L

=8Ω,

R

GEN

=3Ω

Body Diode Reverse Recovery Charge I

F

=3.5A, dI/dt=300A/µs

A. The value of R

θJA

is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T

A

=25° The

C.

value in any given application depends on the user's specific board design.

B. The power dissipation P

D

is based on T

J(MAX)

=150° using

≤

10s junction-to-ambient thermal resistance.

C,

C. Repetitive rating, pulse width limited by junction temperature T

J(MAX)

=150° Ratings are based on low frequency and duty cycles to keep

C.

initialT

J

=25°

C.

D. The R

θJA

is the sum of the thermal impedence from junction to lead R

θJL

and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in

2

FR-4 board with