DT
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Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
30
R
DS(on)
(Ω)
0.0355 at V
GS
= 10 V
0.044 at V
GS
= 4.5 V
I
D
(A)
6.5
5.8
3.7 nC
Q
g
(Typ.)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• 100 % UIS Tested
• 100 % R
g
Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top
View
8
7
6
5
D
1
D
1
D
2
D
2
• Set Top Box
• Low Current DC/DC
D
1
D
2
G
1
G
2
S
1
N-Channel
MOSFET
S
2
N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
Limit
30
± 20
6.5
a
5.2
5.2
b, c
4.2
b, c
24
2.25
1.48
b, c
5
1.25
2.7
1.77
1.78
b, c
1.14
b, c
- 55 to 150
mJ
Unit
V
A
T
C
= 25 °C
T
C
= 70 °C
Maximum Power Dissipation
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
a, c, d
t
≤
10 s
Steady State
Symbol
R
thJA
R
thJF
Typical
58
38
Maximum
70
45
Unit
°C/W
Notes:
a. Package limited, T
C
= 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W.
1
DINTEK [ DinTek Semiconductor Co,.Ltd ]
