DT.
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
0.08
0.07
0.06
0.05
0.04
0.03
0.02
I
D
= 4.6 A
125 °C
T
J
= 150 °C
10
T
J
= 25 °C
25 °C
4
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
6
8
10
V
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
SD
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
50
40
I
D
= 250 µA
30
20
10
0
-3
-2
-1
10
10
10
1
10
100
600
- 50 - 25
0
25
50
75
100 125 150
Time (s)
T
- Temperature (°C)
J
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
Limited by R
*
DS(on)
10
1
100 µs
1 ms
10 ms
100 ms
0.1
T
= 25 °C
A
1 s
Single Pulse
10 s
DC
BVDSS Limited
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V > minimum V at which R is specified
GS
GS
DS(on)
Safe Operating Area
4
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