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Dual N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
20
R
DS(on)
(Ω)
0.022 at V
GS
= 4.5 V
0.030 at V
GS
= 2.5 V
I
D
(A)
6.5
5.5
FEATURES
•
Halogen-free Option Available
• TrenchFET
®
Power MOSFETs
Pb-free
Available
RoHS*
COMPLIANT
TSSOP-8
D
S
1
S
1
G
1
1
2
3
4
Top View
8 D
7 S
2
6 S
2
5 G
2
G1
D
D
G2
S1
S2
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
1.5
1.5
0.96
- 55 to 150
6.5
5.5
30
1.0
1.0
0.64
W
°C
10 s
20
± 12
5.2
3.5
A
Steady State
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on FR4 board, t
≤
10 s.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
t
≤
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typ.
72
100
55
Max.
83
120
70
°C/W
Unit
1
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