N-Channel 30-V (D-S) MOSFET
FEATURES
I
D
(A)
a
10 V
6.8
5.8
Q
g
(Typ.)
9.2 nC
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DTM9410
PRODUCT SUMMARY
V
DS
(V)
30
R
DS(on)
(Ω)
0.032 at V
GS
=
0.045 at V
GS
= 4.5 V
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
D
• Notebook Load Switch
• Low Current dc-to-dc
SO-8
S
S
S
G
1
2
3
4
Top
View
8
7
6
5
D
D
D
D
S
N-Channel
MOSFET
G
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
Limit
30
± 20
6.8
a
5
a
6.5
b,c
4.9
b,c
30
2.7
1.7
b,c
4.1
2.6
2
b,c
1.25
b,c
- 55 to 150
Unit
V
Continuous Drain Current (T
J
= 150 °C)
I
D
A
Pulsed Drain Current
Continuous Source-Drain Diode Current
I
DM
I
S
Maximum Power Dissipation
P
D
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum
Maximum Junction-to-Foot
Junction-to-Ambient
b, d
t
≤
5s
Steady State
Symbol
R
thJA
R
thJF
Typical
45
25
Maximum
62.5
30
Unit
°C/W
Notes:
a. Package Limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 110 °C/W.
1