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P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
- 30
R
DS(on)
(Ω)
0.042 at V
GS
= - 10 V
0.055 at V
GS
= - 6 V
0.070 at V
GS
= - 4.5 V
I
D
(A)
- 5.7
- 5.0
- 4.4
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
SO-8
S
S
S
G
1
2
3
4
Top View
8
7
6
5
D
D
D
D
G
S
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
- 2.3
2.5
1.6
- 55 to 150
- 5.7
- 4.6
- 30
- 1.1
1.3
0.8
W
°C
10 s
- 30
± 20
- 4.1
- 3.2
A
Steady State
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t
≤
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
40
70
24
Maximum
50
95
30
°C/W
Unit
Document Number: 72245
S09-0870-Rev. D, 18-May-09
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1
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