DT
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TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1.6
R
DS(on)
- On-Resistance (
N
ormalized)
V
GS
= 10
V,
I
D
= 28.8 A
V
GS
= 4.5
V,
I
D
= 27 A
1.4
I
S
- So
u
rce C
u
rrent (A)
10
100
1.2
1
T
J
= 150 °C
0.1
T
J
= 25 °C
1.0
0.8
0.01
0.6
- 50
0.001
- 25
0
25
50
75
100
125
150
175
0
0.2
0.4
0.6
0.8
1
T
J
- Junction Temperature (°C)
V
SD
- Source-to-Drain
Voltage
(V)
On-Resistance vs. Junction Temperature
0.005
I
D
= 28.8 A
R
DS(on
) -On-Resistance (Ω)
0.004
T
A
= 125 °C
V
GS(th)
V
ariance (
V
)
2.4
2.8
Forward Diode Voltage vs. Temperature
I
D
= 250
µA
2.0
0.003
T
A
= 25 °C
0.002
1.6
0.001
1.2
0.000
0
2
4
6
8
10
V
GS
- Gate-to-Source
Voltage
(V)
0.8
- 50 - 25
0
25
50
75
100
125 150
175
T
J
- Temperature (°C)
R
DS(on)
vs. V
GS
vs. Temperature
1000
*Limited by r
DS (on)
100
I
D
- Drain Current (A)
Threshold Voltage
10
10 ms
100 ms
1
1s
10 s
dc
0.1
0.01
T
A
= 25 °C
Single Pulse
0.001
0.1
*V
GS
1
10
100
V
DS
- Drain-to-Source Voltage (V)
minimum V
GS
at which r
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
4
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