N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
30
R
DS(on)
()
0.0038 at V
GS
= 10 V
0.0044 at V
GS
= 4.5 V
I
D
(A)
a, e
98
98
Q
g
(Typ)
82 nC
www.din-tek.jp
DTP0403
• TrenchFET
®
Power MOSFET
• 100 % R
g
and UIS Tested
• Compliant to RoHS Directive 2011/65/EU
APPLICATIONS
D
TO-220AB
• OR-ing
• Server
• DC/DC
G
S
G D S
Top View
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 175 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current
Avalanche Current Pulse
Single Pulse Avalanche Energy
Continuous Source-Drain Diode Current
L = 0.1 mH
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
T
J
, T
stg
P
D
I
DM
I
AS
E
AS
I
S
I
D
Symbol
V
DS
V
GS
Limit
30
± 20
98
a, e
98
e
28.8
b, c
27
b, c
90
36
64.8
90
a, e
3.13
b, c
250
a
175
3.75
b, c
2.63
b, c
- 55 to 175
°C
W
V
A
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Case
t
10 sec
Steady State
Symbol
R
thJA
R
thJC
Typ.
32
0.5
Max.
40
0.6
Unit
°C/W
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 sec.
d. Maximum under steady state conditions is 90 °C/W.
e. Calculated based on maximum junction temperature. Package limitation current is 90 A.
1
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