DTP4N60/DTP4N60F/DTU4N60/DTL4N60
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
39
10
19
Single
600
2.2
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FEATURES
•
•
•
•
•
•
•
Ultra Low Gate Charge
Reduced Gate Drive Requirement
Enhanced 30 V, V
GS
Rating
Reduced C
iss
, C
oss
, C
rss
Extremely High Frequency Operation
Repetitive Avalanche Rated
Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
TO-220AB
TO-251
TO-220 FULLPAK
TO-252
D
G
G D S
G D S
Top View
Top
View
G
D
S
S
G D S
Top View
Top
View
N-Channel MOSFET
DTP4N60
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
DTP4N60F
DTU4N60
V
DS
DTL4N60
SYMBOL
V
GS
LIMIT
600
± 30
4
2.9
25
1.0
530
6.2
13
125
3.0
- 55 to + 150
300
d
10
1.1
UNIT
V
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
I
D
I
DM
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
T
C
= 25 °C
for 10 s
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 25 mH, R
g
= 25
,
I
AS
= 6.2 A (see fig. 12).
c. I
SD
6.2 A, dI/dt
80 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
1
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