P-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
() Max.
0.0078 at V
GS
= - 10 V
- 30
0.0082 at V
GS
= - 6 V
0.0092 at V
GS
= - 4.5 V
I
D a
- 26
- 23
- 20
66 nC
Q
g
(Typ.)
www.din-tek.jp
DTP9531
• Extended V
GS
range (± 25 V) for adaptor switch
applications
• Extremely low R
DS(on)
• TrenchFET
®
Power MOSFET
• 100 % R
g
and UIS Tested
• Typical ESD Performance: 4000 V (HBM)
PowerPAK SO-8
APPLICATIONS
• Adaptor Switch, Load Switch
• Power Management
6.15 mm
S
1
2
3
S
S
S
5.15 mm
•
Notebook Computers and Portable
Battery Packs
G
4
G
D
8
7
6
5
D
D
D
D
P-Channel MOSFET
Bottom View
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
T
J
, T
stg
P
D
I
DM
I
S
I
AS
E
AS
I
D
Symbol
V
DS
V
GS
Limit
- 30
± 25
- 26
- 20.7
- 17.3
- 13.9
b, c
- 60
- 5.8
b, c
- 2.6
b, c
- 40
80
6.9
4.4
3.1
b, c
2
b, c
- 55 to 150
W
mJ
A
Unit
V
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Foot (Drain)
t
10 s
Steady State
Symbol
R
thJA
R
thJF
Typical
33
15
Maximum
40
17
Unit
°C/W
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 90 °C/W.
1
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