DTS
www.daysemi.jp
N-Channel16
−V
(D−S) MOSFET
PRODUCT SUMMARY
V
(BR)DSS
Min (V)
16
FEATURES
I
D
(A)
V
GS(th)
(V)
1.0
1 0 to 3 0
3.0
D
TrenchFETr Power MOSFET
r
DS( )
DS(on)
Max (W)
1.0 @ V
GS
= 10 V
1.4 @ V
GS
= 4.5 V
DTS03K16 DTS03K16A
0.42
0.35
0.64
0.53
APPLICATIONS
D
Direct Logic-Level Interface: TTL/CMOS
D
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D
Battery Operated Systems
D
Solid-State Relays
TO-236
(SOT-23)
D
G
1
3
D
G
S
2
S
Top
View
N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limit
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
Pulsed Drain
Current
a
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
T
J
, T
stg
DTS03K16
16
"8
0.42
0.33
0.8
0.35
0.22
357
DTS03K16A
Unit
V
0.64
0.51
1.5
0.8
0.51
156
−55
to 150
W
_C/W
_C
A
Power Dissipation
Thermal Resistance, Junction-to-Ambient
Operating Junction and Storage Temperature Range
Notes
a. Pulse width limited by maximum junction temperature.
1
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