P-Channel 100-V (D-S) MOSFET
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DTS1003
PRODUCT SUMMARY
V
DS
(V)
- 100
R
DS(on)
(Ω)
1.2 at V
GS
= - 10 V
1.3 at V
GS
= - 6.0 V
I
D
(A)
- 0.69
- 0.66
Q
g
(Typ.)
7.7
FEATURES
•
Halogen-free According to IEC 61249-2-21
Available
• TrenchFET
®
Power MOSFET
• Ultra Low On-Resistance
• Small Size
APPLICATIONS
• Active Clamp Circuits in DC/DC Power Supplies
TO-236
(SOT-23)
G
1
3
S
2
D
Top View
DTS1003
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a, b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a, b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
a, b
Operating Junction and Storage Temperature Range
L = 1.0 mH
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
1.25
0.8
- 55 to 150
- 1.0
4.5
1.01
0.75
0.48
mJ
W
°C
- 0.69
- 0.55
- 1.6
- 0.6
5s
Steady State
-
100
± 20
- 0.53
- 0.43
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Pulse width limited by maximum junction temperature.
t
≤
5s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
75
120
40
Maximum
100
166
50
°C/W
Unit
1
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