N-Channel 100 V (D-S) MOSFET
FEATURES
MOSFET PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
0.234 at V
GS
= 10 V
100
0.267 at V
GS
= 6 V
0.278 at V
GS
= 4.5 V
I
D
(A)
a
2.3
2.1
1.7
2.9 nC
Q
g
(Typ.)
www.din-tek.jp
DTS1004
•
•
•
•
TrenchFET
®
Power MOSFET
100 % R
g
Tested
100 % UIS Tested
Material categorization:
APPLICATIONS
• DC/DC Converters
• Load Switch
• LED Backlighting in LCD TVs
G
1
3
S
2
D
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
Limit
100
± 20
2.3
1.8
1.6
b, c
1.3
b, c
5
2.1
1.0
b, c
5
1.25
2.5
1.6
1.25
b, c
0.8
b, c
- 55 to 150
Unit
V
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
A
mJ
Maximum Power Dissipation
W
Operating Junction and Storage Temperature Range
°C
THERMAL RESISTANCE RATINGS
Parameter
5
s
Maximum
Steady State
Maximum Junction-to-Foot (Drain)
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 166 °C/W.
Junction-to-Ambient
b, d
Symbol
R
thJA
R
thJF
Typical
75
40
Maximum
100
50
Unit
°C/W
1
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