N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
30
R
DS(on)
()
0.045 at V
GS
= 10 V
0.049 at V
GS
= 4.5 V
0.060 at V
GS
= 2.5 V
I
D
(A)
a
4
4
4
4 nC
Q
g
(Typ.)
www.din-tek.jp
DTS2012
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• Typical ESD Protection 2000 V HBM
• 100 % R
g
Tested
• Compliant to RoHS Directive 2002/95/EC
SOT-323
SC-70 (3-LEADS)
G
1
G
APPLICATIONS
D
• Portable Devices
- Load Switch
- Battery Switch
• Load Switch for Motors, Relays and Solenoids
3
D
S
2
Top
View
S
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
T
J
, T
stg
P
D
I
DM
I
S
I
D
Symbol
V
DS
V
GS
Limit
30
± 12
4
a
4
a
4
a, b, c
3.7
b, c
20
2.3
a
1.3
b, c
2.8
1.8
1.56
b, c
1.0
b, c
- 55 to 150
°C
W
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Foot (Drain)
t
5s
Steady State
Symbol
R
thJA
R
thJF
Typical
60
34
Maximum
80
45
Unit
°C/W
Notes:
a. Package limited, T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 125 °C/W.
1
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