N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
() at V
GS
= 4.5 V
R
DS(on)
() at V
GS
= 2.5 V
R
DS(on)
() at V
GS
= 1.5 V
I
D
(A)
Configuration
20
0.024
0.033
0.042
5.2
Single
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DTS2300A
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• AEC-Q101 Qualified
c
• 100 % R
g
and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
D
TO-236
(SOT-23)
G
1
G
3
S
2
D
Top View
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Current
a
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25 °C
T
C
= 125 °C
T
C
= 25 °C
T
C
= 125 °C
SYMBOL
V
DS
V
GS
I
D
I
S
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
LIMIT
20
±8
5.2
3.5
2.5
24
10
5
2
0.6
- 55 to + 175
mJ
W
°C
A
UNIT
V
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
PCB Mount
b
SYMBOL
R
thJA
R
thJF
LIMIT
175
75
UNIT
°C/W
1
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