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N-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
20
R
DS(on)
()
0.057 at V
GS
= 4.5 V
0.075 at V
GS
= 2.5 V
I
D
(A)
2.9
2.6
Q
g
(Typ.)
3.5
• TrenchFET
®
Power MOSFET
APPLICATIONS
• Load Switching for Portable Devices
• DC/DC Converter
TO-236
(SOT-23)
G
1
3
D
S
2
Top View
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
b
Continuous Source Current (Diode Conduction)
a
Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
0.72
0.86
0.55
- 55 to 150
2.9
2.3
10
0.6
0.71
0.46
W
°C
5s
20
±8
2.6
2.1
A
Steady State
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Pulse width limited by maximum junction temperature.
t
5s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
120
140
62
Maximum
145
175
78
°C/W
Unit
1
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