Din-Tek
Silicon P Channel MOS FET
Power Switching
Features
Low on-resistance
R
DS(on)
=
m typ (V
GS
= –4.5 V, I
D
= –1.8 A)
Low drive current
High speed switching
2.5 V gate drive
Preliminary
Datasheet
DINDS0290EJ0400
(Previous:
DIN03G1317-0300)
Rev.4.00
Mar 28, 2011
Outline
Package code: PLSP0003ZB-A
(Package name:
SOT-23)
3
3
1
2
S
2
D
1. Source
2. Gate
3. Drain
G
1
Note:
Marking is “018K”.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D(pulse) Note1
I
DR
Pch
(pulse) Note2
Tch
Tstg
I
D
Ratings
–20
+8 / –12
–3.8
–11
–3.8
0.8
150
–55 to +150
Unit
V
V
A
A
A
W
C
C
Notes: 1. PW
10
s,
duty cycle
1%
2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)
DINDS0290EJ0400
Rev.4.00
Mar 28, 2011
Page 1 of 6
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