TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
1.5
1.4
V
GS
= 4.5
V,
2.5
V;
I
D
= 3.2 A
R
DS(on)
- On-Resistance
I
S
- Source Current (A)
1.3
(Normalized)
1.2
1.1
V
GS
= 1.8
V;
I
D
= 1.5 A
1.0
0.9
0.8
0.7
- 50
0.1
0.0
T
J
= 150 °C
10
100
T
J
= 25 °C
1
- 25
0
25
50
75
100
125
150
0.2
0.4
0.6
0.8
1.0
1.2
T
J
- Junction Temperature (°C)
V
SD
- Source-to-Drain
Voltage
(V)
On-Resistance vs. Junction Temperature
0.18
0.8
Soure-Drain Diode Forward Voltage
0.15
R
DS(on)
- On-Resistance (Ω)
I
D
= 3.2 A; T
J
= 125 °C
0.12
I
D
= 0.5 A; T
J
= 125 °C
0.09
V
GS(th)
(V)
0.7
I
D
= 250
µA
0.6
0.5
0.06
I
D
= 3.2 A; T
J
= 25 °C
I
D
= 0.5 A; T
J
= 25 °C
0.4
0.03
0.00
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.3
- 50
- 25
0
25
50
75
100
125
150
V
GS
- Gate-to-Source
Voltage
(V)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
40
100
Threshold Voltage
Limited
by
R
DS(on)
*
30
10
100
µs
I
D
- Drain Current (A)
Power (W)
1 ms
1
10 ms
100 ms
0.1
T
A
= 25 °C
Single Pulse
BVDSS Limited
1 s, 10 s
DC
20
10
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
0.01
0.1
1
10
100
Single Pulse Power, Junction-to-Ambient
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
4
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