New Product
DTS2305
P-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
0.061 at V
GS
= - 4.5 V
- 20
0.080 at V
GS
= - 2.5 V
0.110 at V
GS
= - 1.8 V
0.165 at V
GS
= - 1.5 V
I
D
(A)
a
- 4.4
- 3.8
- 3.3
- 0.5
7.6 nC
Q
g
(Typ.)
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• 100 % R
g
Tested
• Typical ESD Performance
1200
V
•
AEC-Q101 Qualifiedc
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch for Portable Devices
TO-236
(SOT-23)
S
G
1
G
3
S
2
D
Top
View
DTS
D
P-Channel MOSFET
Ordering Information:
DTS2305
(Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
Limit
- 20
±8
- 4.4
- 3.5
- 3.7
b, c
- 2.9
b, c
- 20
- 1.5
- 1.0
b, c
1.8
1.1
1.25
b, c
0.8
b, c
- 55 to 150
260
Unit
V
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
A
Maximum Power Dissipation
P
D
T
J
, T
stg
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d, e
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum
Maximum Junction-to-Foot (Drain)
Notes:
a. T
C
= 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 130 °C/W.
www.
1
Junction-to-Ambient
b, d
t
≤
5s
Steady State
Symbol
R
thJA
R
thJF
Typical
80
55
Maximum
100
70
Unit
°C/W
DINTEK [ DinTek Semiconductor Co,.Ltd ]
