N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
30
R
DS(on)
(Ω)
0.024 at V
GS
= 10 V
0.033 at V
GS
= 4.5 V
I
D
(A)
a
6
2.1 nC
4.8
Q
g
(Typ.)
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DTS3400A
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• 100 % R
g
Tested
•
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Converter
TO-236
(SOT-23)
D
G
1
3
D
G
S
2
S
Top
View
DTS3402
N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 70 °C
Maximum Power Dissipation
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d, e
Continuous Source-Drain Diode Current
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
Limit
30
± 20
6.0
a
4.3
6.0
4.7
15
1.4
0.9
b, c
1.7
1.1
1.1
b, c
0.7
b, c
- 55 to 150
260
Unit
V
A
P
D
T
J
, T
stg
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Notes:
a. Package limited
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 130 °C/W.
b, d
t
≤
5s
Steady State
Symbol
R
thJA
R
thJF
Typical
90
60
Maximum
115
75
Unit
°C/W
1