DTS3401
www.daysemi.jp
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
- 30
R
DS(on)
(Ω)
0.088 at V
GS
= - 10 V
0.138 at V
GS
= - 4.5 V
I
D
(A)
a, b
- 2.7
- 2.2
Q
g
(Typ.)
4.1 nC
FEATURES
•
Halogen-free Option Available
• TrenchFET
®
Power MOSFET
RoHS
APPLICATIONS
• Load Switch for Portable Devices
COMPLIANT
TO-236
(SOT-23)
S
G
1
3
S
2
D
G
Top View
DTS3401
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
a, b
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source-Drain Diode Current
a, b
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
Maximum Power Dissipation
a, b
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
c
T
J
, T
stg
P
D
I
DM
I
S
I
D
Symbol
V
DS
V
GS
Limit
- 30
± 20
- 3.5
- 2.8
- 2.7
a, b
- 2.2
a, b
- 12
- 1.5
- 0.91
a, b
1.8
1.14
1.1
a, b
0.7
a, b
- 55 to 150
260
°C
W
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum
Junction-to-Ambient
a, c
t
≤
5s
Steady State
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under Steady State conditions is 166 °C/W.
Symbol
R
thJA
R
thJF
Typical
90
55
Maximum
115
70
Unit
°C/W
www.
1
DINTEK [ DinTek Semiconductor Co,.Ltd ]
