TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
0.14
I
D
= 3.2 A
R
DS(on)
- On-Resistance (Ω)
0.12
I
S
- Source Current (A)
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DTS3402
10
T
J
= 150 °C
0.10
T
J
= 25 °C
0.08
T
J
= 125 °C
1
0.06
T
J
= 25 °C
0.1
0.0
0.04
0.3
0.6
0.9
1.2
1.5
0
2
4
6
8
10
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
2.4
25
On-Resistance vs. Gate-to-Source Voltage
2.2
20
2.0
V
GS(th)
(V)
Power (W)
15
I
D
= 250
µA
1.8
10
1.6
5
1.4
1.2
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
I
D
- Drain Current (A)
10
100
µs
Single Pulse Power
1
1 ms
10 ms
100 ms
0.1
T
A
= 25 °C
Single Pulse
0.01
0.1
1
1 s, 10 s
DC
BVDSS Limited
10
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
4
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