欢迎访问ic37.com |
会员登录 免费注册
发布采购

DTS4500 参数 Datasheet PDF下载

DTS4500图片预览
型号: DTS4500
PDF下载: 下载PDF文件 查看货源
内容描述: 无卤符合IEC 61249-2-21 [Halogen-free According to IEC 61249-2-21]
分类和应用:
文件页数/大小: 9 页 / 473 K
品牌: DINTEK [ DinTek Semiconductor Co,.Ltd ]
 浏览型号DTS4500的Datasheet PDF文件第2页浏览型号DTS4500的Datasheet PDF文件第3页浏览型号DTS4500的Datasheet PDF文件第4页浏览型号DTS4500的Datasheet PDF文件第5页浏览型号DTS4500的Datasheet PDF文件第6页浏览型号DTS4500的Datasheet PDF文件第7页浏览型号DTS4500的Datasheet PDF文件第8页浏览型号DTS4500的Datasheet PDF文件第9页  
New Product
DTS4500
www.daysemi.jp
N-Channel 40 V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
40
R
DS(on)
()
0.042 at V
GS
= 10 V
0.051 at V
GS
= 4.5 V
I
D
(A)
a
5.6
5.1
Q
g
(Typ.)
2.9 nC
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• 100 % R
g
Tested
Compliant to RoHS Directive 2002/95/EC
TO-236
(SOT-23)
D
APPLICATIONS
• DC/DC Converters
• Load Switch
• Portable and Consumer Applications
G
1
3
D
S
2
G
Top View
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
I
DM
I
S
Symbol
V
DS
V
GS
Limit
40
± 20
5.6
a
4.5
4.3
b, c
3.5
b, c
20
1.75
1.04
b, c
2.1
1.3
1.25
b, c
0.8
b, c
- 55 to 150
260
A
Unit
V
Continuous Drain Current (T
J
= 150 °C)
I
D
Maximum Power Dissipation
P
D
W
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Foot (Drain)
t
5s
Steady State
Symbol
R
thJA
R
thJF
Typical
80
40
Maximum
100
60
Unit
°C/W
Notes:
a. Based on T
C
= 25 °C
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 125 °C/W.
Document Number: 67030
S10-2250-Rev. A, 04-Oct-10
www.daysemi.jp
1