N-Channel 40 V (D-S) MOSFET
www.din-tek.jp
DTS4500
PRODUCT SUMMARY
V
DS
(V)
40
R
DS(on)
()
0.040 at V
GS
= 10 V
0.055 at V
GS
= 4.5 V
I
D
(A)
a
3.6
3.1
Q
g
(Typ.)
2.9 nC
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• 100 % R
g
Tested
•
Compliant to RoHS Directive 2002/95/EC
TO-236
(SOT-23)
D
APPLICATIONS
• DC/DC Converters
• Load Switch
• Portable and Consumer Applications
G
1
3
D
S
2
G
Top View
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
I
DM
I
S
Symbol
V
DS
V
GS
Limit
40
± 20
3.6
a
2.5
3.3
b, c
2.5
b, c
20
1.75
1.04
b, c
2.1
1.3
1.25
b, c
0.8
b, c
- 55 to 150
260
A
Unit
V
Continuous Drain Current (T
J
= 150 °C)
I
D
Maximum Power Dissipation
P
D
W
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Foot (Drain)
t
5s
Steady State
Symbol
R
thJA
R
thJF
Typical
80
40
Maximum
100
60
Unit
°C/W
Notes:
a. Based on T
C
= 25 °C
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 125 °C/W.
1
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