P-Channel 60 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
- 60
R
DS(on)
()
5 at V
GS
= - 10 V
V
GS(th)
(V)
- 1 to - 3
I
D
(mA)
- 130
www.din-tek.jp
DTS7001
TO-236
(SOT-23)
S
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• High-Side Switching
• Low On-Resistance: 5
• Low Threshold: - 2 V (typ.)
• Fast Swtiching Speed: 20 ns (typ.)
• Low Input Capacitance: 20 pF (typ.)
•
1200
V ESD Protection
• Compliant to RoHS Directive 2002/95/EC
G
1
3
D
G
APPLICATIONS
• Drivers: Relays, Solenoids, Lamps, Hammers, Display,
Memories, Transistors, etc.
• Battery Operated Systems
• Power Supply Converter Circuits
• Solid-State Relays
S
2
Top View
DTS
01
D
P-Channel MOSFET
BENEFITS
•
•
•
•
•
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Easily Driven without Buffer
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain
Current
b
T
A
= 25 °C
T
A
= 100 °C
T
A
= 25 °C
T
A
= 100 °C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
T
J,
T
stg
Limit
- 60
± 20
- 130
- 105
- 800
350
140
350
- 55 to 150
mW
°C/W
°C
mA
Unit
V
Power Dissipation
a
Maximum Junction-to-Ambient
a
Operating Junction and Storage Temperature Range
Notes:
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
1
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