D
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N-Channel 100 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
100
R
DS(on)
()
0.095 at V
GS
= 10 V
0.100 at V
GS
= 6 V
I
D
(A)
15
15
• TrenchFET
®
Power MOSFETS
• 175 °C Junction Temperature
• 100 % R
g
Tested
APPLICATIONS
D
• Primary Side Switch
TO-252
G
G
D
S
S
N-Channel MOSFET
Top View
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175 °C)
b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Repetitive Avalanche Energy (Duty Cycle
1 %)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 125 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
AR
E
AR
P
D
T
J
, T
stg
Limit
100
± 20
15
8.7
25
15
15
11.3
62
b
2.7
a
- 55 to 175
mJ
W
°C
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
a
Junction-to-Case
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See SOA curve for voltage derating.
t
10 s
Steady State
Symbol
R
thJA
R
thJC
Typical
16
45
2
Maximum
20
55
2.4
°C/W
Unit
1
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