D
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P-Channel 100 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
- 100
R
DS(on)
()
0.295 at V
GS
= - 10 V
0.315 at V
GS
= - 6 V
I
D
(A)
- 15
- 15
Q
g
(Typ.)
23.2 nC
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET Power MOSFET
• 100 % R
g
and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Active Clamp in Intermediate DC/DC Power Supplies
• H-Bridge High Side Switch for Lighting Application
TO-252
S
G
G
D
S
D
P-Channel MOSFET
Top View
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
Limit
- 100
± 20
- 15
- 9.1
- 2.3
a, b
- 1.9
a, b
- 19
- 15
- 3
a, b
15
11.25
52
33
3.7
a, b
2.4
a, b
- 50 to 150
260
Unit
V
Continuous Drain Current (T
J
= 150 °C)
I
D
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
I
DM
I
S
I
AS
E
AS
A
mJ
Maximum Power Dissipation
P
D
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
T
J
, T
stg
°C
1
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