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N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
20
R
DS(on)
(Ω)
0.005 at V
GS
= 10 V
0.0057 at V
GS
= 4.5 V
0.0076 at V
GS
= 2.5 V
I
D
(A)
a
30
30
30
15.5 nC
Q
g
(Typ.)
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Gen III Power MOSFET
• 100 % R
g
Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
D
TO-252
APPLICATIONS
• DC/DC
• Low Voltage Drive
• POL
G
G
D
S
S
N-Channel MOSFET
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ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
Limit
20
± 12
30
a
30
a
22.6
b, c
18.2
b, c
70
25
a
4.1
b, c
20
20
27.7
17.7
4.6
b, c
3.0
b, c
- 55 to 150
260
Unit
V
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
I
DM
I
S
I
AS
E
AS
P
D
A
mJ
Maximum Power Dissipation
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
t
≤
10 s
Steady State
Symbol
R
thJA
R
thJC
Typical
22
3.5
Maximum
27
4.5
Unit
°C/W
1
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